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Nef, Cornelia. Contacting strategies for molecular electronics. 2014, Doctoral Thesis, University of Basel, Faculty of Science.

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Bouvron, Samuel and Graf, Alexandra and Gragnaniello, Luca and Wiedmann, Dirk and Cornelia Nef, Cornelia and Schönenberger, Christian and Fonin, Mikhail and Muarand, Romain and Erler, Philipp and Skripnik, Maxim and Engesser, Clara and Fu, Wangyang and Pauly, Fabian. (2018) Charge transport in a single molecule transistor probed by scanning tunneling microscopy. Nanoscale, 10 (3). pp. 1487-1493.

Nef, C. and Pósa, L. and Makk, P. and Fu, W. and Halbritter, A. and Schönenberger, C. and Calame, M.. (2014) High-yield fabrication of nm-sized gaps in monolayer CVD graphene. Nanoscale, Vol. 6, H. 13. pp. 7249-7254.

Thodkar, K. and Nef, C. and Fu, W. and Schönenberger, C. and Calame, M. and Lüönd, F. and Overney, F. and Jeckelmann, B. and Jeanneret, B.. (2014) CVD graphene for electrical quantum metrology. In: Conference on Precision Electromagnetic Measurements (CPEM 2014), 2014 : 24 - 29 Aug. 2014, Rio de Janeiro, Brazil. Piscataway, NJ, pp. 540-541.

Eren, Baran and Glatzel, Thilo and Kisiel, Marcin and Fu, Wangyang and Pawlak, Rémy and Gysin, Urs and Nef, Cornelia and Marot, Laurent and Calame, Michel and Schönenberger, Christian and Meyer, Ernst. (2013) Hydrogen plasma microlithography of graphene supported on a Si/SiO2 substrate. Applied physics letters, 102 (7). 071602.

Fu, Wangyang and Nef, Cornelia and Tarasov, Alexey and Wipf, Mathias and Stoop, Ralph and Knopfmacher, Oren and Weiss, Markus and Calame, Michel and Shönenberger, Christian. (2013) High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization. Nanoscale, 5 (24). pp. 12104-12110.

Nef, C. and Frederix, Pltm and Brunner, J. and Schönenberger, C. and Calame, M.. (2012) Force-conductance correlation in individual molecular junctions. Nanotechnology, Vol. 23, H: 36 , 365201.

Fu, W. Y. and Nef, C. and Knopfrnacher, O. and Tarasov, A. and Weiss, M. and Calame, M. and Schonenberger, C.. (2011) Graphene Transistors Are Insensitive to pH Changes in Solution. Nano Letters, Vol. 11, H. 9. pp. 3597-3600.