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Hydrogen plasma microlithography of graphene supported on a Si/SiO2 substrate

Eren, Baran and Glatzel, Thilo and Kisiel, Marcin and Fu, Wangyang and Pawlak, Rémy and Gysin, Urs and Nef, Cornelia and Marot, Laurent and Calame, Michel and Schönenberger, Christian and Meyer, Ernst. (2013) Hydrogen plasma microlithography of graphene supported on a Si/SiO2 substrate. Applied physics letters, 102 (7). 071602.

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Official URL: http://edoc.unibas.ch/dok/A6212027

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Abstract

In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO2 substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Eren, Baran and Glatzel, Thilo and Kisiel, Marcin and Fu, Wangyang and Nef, Cornelia and Gysin, Urs and Pawlak, Rémy and Marot, Laurent and Calame, Michel and Schönenberger, Christian and Meyer, Ernst
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Institute of Physics
ISSN:0003-6951
e-ISSN:1077-3118
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
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Last Modified:28 Jun 2023 05:53
Deposited On:31 Jan 2014 09:49

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