Browse by Basel Contributors ID

2013

Fu, Wangyang and Nef, Cornelia and Tarasov, Alexey and Wipf, Mathias and Stoop, Ralph and Knopfmacher, Oren and Weiss, Markus and Calame, Michel and Shönenberger, Christian. (2013) High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization. Nanoscale, 5 (24). pp. 12104-12110.

2012

Knopfmacher, O. and Tarasov, A. and Wipf, M. and Fu, W. Y. and Calame, M. and Schonenberger, C.. (2012) Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH. Chemphyschem, Vol. 13, H. 5. pp. 1157-1160.

Tarasov, A. and Wipf, M. and Stoop, R. L. and Bedner, K. and Fu, W. Y. and Guzenko, V. A. and Knopfmacher, O. and Calame, M. and Schonenberger, C.. (2012) Understanding the Electrolyte Background for Biochemical Sensing with Ion-Sensitive Field-Effect Transistors. ACS nano, Vol. 6, H. 10. pp. 9291-9298.

Tarasov, A. and Wipf, M. and Bedner, K. and Kurz, J. and Fu, W. and Guzenko, V. A. and Knopfmacher, O. and Stoop, R. L. and Calame, M. and Schonenberger, C.. (2012) True Reference Nanosensor Realized with Silicon Nanowires. Langmuir, Vol. 28, H. 25. pp. 9899-9905.

Fu, Wangyang Y. and Nef, Cornelia and Tarasov, Alexey and Wipf, Mathias and Stoop, Ralph and Knopfmacher, Oren and Weiss, Markus and Calame, Michel and Schönenberger, Christian. (2012) Sensing with liquid-gated graphene field-effect transistors. 2012 12th IEEE Conference on Nanotechnology. New York.

2011

Knopfmacher, Oren. Sensing with silicon nanowire field-effect transistors. 2011, Doctoral Thesis, University of Basel, Faculty of Science.

Tarasov, A. and Fu, W. and Knopfmacher, O. and Brunner, J. and Calame, M. and Schonenberger, C.. (2011) Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors. Applied physics letters, Vol. 98 , 012114.

Fu, W. Y. and Nef, C. and Knopfrnacher, O. and Tarasov, A. and Weiss, M. and Calame, M. and Schonenberger, C.. (2011) Graphene Transistors Are Insensitive to pH Changes in Solution. Nano Letters, Vol. 11, H. 9. pp. 3597-3600.

2010

Knopfmacher, O. and Tarasov, A. and Wangyang, Fu and Wipf, M. and Niesen, B. and Calame, M. and Schönenberger, C.. (2010) The Nernst limit in dual-gated Si nanowire FET sensors. Nano Letters, Vol. 10, H. 6. pp. 2268-2274.

Knopfmacher, O. and Tarasov, A. and Fu, W. and Calame, M. and Schönenberger, C.. (2010) Sensitivity considerations in dual-gated Si-nanowire FET sensors. European cells and materials, Vol. 20. p. 140.

2009

Knopfmacher, O. and Keller, D. and Calame, M. and Schönenberger, C.. (2009) Dual gated silicon nanowire field effect transistors. In: Procedia chemistry, Vol. 1, H. 1. Amsterdam, pp. 678-681.