Sensitivity considerations in dual-gated Si-nanowire FET sensors

Knopfmacher, O. and Tarasov, A. and Fu, W. and Calame, M. and Schönenberger, C.. (2010) Sensitivity considerations in dual-gated Si-nanowire FET sensors. European cells and materials, Vol. 20. p. 140.

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Official URL: http://edoc.unibas.ch/dok/A5841636

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Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Knopfmacher, Oren and Tarasov, Alexey and Fu, Wangyang and Calame, Michel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:Univ. of Wales
Note:Publication type according to Uni Basel Research Database: Journal article
Last Modified:14 Sep 2012 07:18
Deposited On:14 Sep 2012 06:47

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