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Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Tarasov, A. and Fu, W. and Knopfmacher, O. and Brunner, J. and Calame, M. and Schonenberger, C.. (2011) Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors. Applied physics letters, Vol. 98 , 012114.

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Official URL: http://edoc.unibas.ch/dok/A6070300

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Abstract

Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low-frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in 1 Hz bandwidth can be reached. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536674]
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Tarasov, Alexey and Knopfmacher, Oren and Brunner, Jan and Calame, Michel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0003-6951
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:01 Mar 2013 11:13
Deposited On:01 Mar 2013 11:06

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