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On-demand semiconductor source of 780 nm single photons with controlled temporal wave packets

Béguin, Lucas and Jahn, Jan-Philipp and Wolters, Janik and Reindl, Marcus and Huo, Yongheng and Trotta, Rinaldo and Rastelli, Armando and Ding, Fei and Schmidt, Oliver G. and Treutlein, Philipp and Warburton, Richard J.. (2018) On-demand semiconductor source of 780 nm single photons with controlled temporal wave packets. Physical Review B, 97 (20). p. 205304.

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Official URL: https://edoc.unibas.ch/68422/

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Abstract

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0)∼0.10–0.15] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
05 Faculty of Science > Departement Physik > Physik > Experimentelle Nanophysik (Treutlein)
UniBasel Contributors:Warburton, Richard J. and Beguin, Lucas and Jahn, Jan-Philipp and Wolters, Janik and Treutlein, Philipp
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:2469-9950
e-ISSN:2469-9969
Note:Publication type according to Uni Basel Research Database: Journal article -- Additional publication or translation in: https://arxiv.org/abs/1710.02490
Language:English
Identification Number:
Last Modified:26 Feb 2019 15:37
Deposited On:26 Feb 2019 15:37

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