Vanoni, Claudio and Jung, Thomas A. and Tsujino, Soichiro. (2009) Temperature dependent charge-injection at the metal-organic semiconductor interface and density of states in pristine and doped pentacene. Applied Physics Letters, 94. p. 253306.
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Abstract
The authors study temperature dependent electrical transport in pristine and tetrafluorotetracyanoquinodimethane (F(4)TCNQ)-doped pentacene to explore the physical mechanism of the doping-induced reduction in the contact resistance at the metal-organic semiconductor interface. It was found that the F(4)TCNQ-doping induces an apparent lowering of the hole injection barrier at gold-pentacene interfaces. In addition, characteristic changes in the density of states (DOS) induced by the F(4)TCNQ-doping in a thin-film transistor geometry have been observed. The correlation between the doping-induced DOS and the carrier injection process is discussed.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik |
|---|---|
| UniBasel Contributors: | Jung, Thomas A. |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| e-ISSN: | 1077-3118 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
| Language: | English |
| Identification Number: |
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| edoc DOI: | |
| Last Modified: | 24 May 2023 08:57 |
| Deposited On: | 24 May 2023 08:57 |
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