Bersano, Fabio and De Palma, Franco and Oppliger, Fabian and Braakman, Floris and Radu, Ionut and Scarlino, Pasquale and Poggio, Martino and Ionescu, Adrian Mihai. (2022) Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing. In: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC). pp. 49-52.
Full text not available from this repository.
Official URL: https://edoc.unibas.ch/92125/
Downloads: Statistics Overview
Abstract
In this work we explore the fabrication and exper-imental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling barriers controllable by two barrier gates ( BL and BR ) and a front gate (FG), the device operation being additionally tunable by a bottom gate (BG). Coulomb blockade current measurements at 10 mK and 4 K demonstrate the possibility of a dynamic transition from a FD-SOI MOSFET and SET operation, making this technology suitable for hybrid SET-MOSFET low power cryogenic circuits for quantum information processing. Room temperature back-gate characterization has been performed on ultra-thin film devices proving the effective reduction of charge noise for a specific bias configuration. This experimental work is a step forward towards low noise planar FD-SOI quantum dots based devices with tunable electrostatic control.
Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Nanotechnologie Argovia (Poggio) |
---|---|
UniBasel Contributors: | Poggio, Martino |
Item Type: | Conference or Workshop Item, refereed |
Conference or workshop item Subtype: | Conference Paper |
Publisher: | IEEE |
e-ISBN: | 978-1-6654-8494-7 |
Note: | Publication type according to Uni Basel Research Database: Conference paper |
Identification Number: | |
Last Modified: | 02 Feb 2023 13:12 |
Deposited On: | 02 Feb 2023 13:07 |
Repository Staff Only: item control page