Hole Spin Qubits in Si FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise

Bosco, Stefano and Hetenyi, Bence and Loss, Daniel. (2021) Hole Spin Qubits in Si FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise. PRX QUANTUM, 2 (1). 010348.

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Official URL: https://edoc.unibas.ch/87696/

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The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si fin field-effect transistors (FinFETs) are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behavior of these devices changes when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:12 Apr 2022 09:15
Deposited On:12 Apr 2022 09:15

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