Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power

Bosco, Stefano and Benito, Monica and Adelsberger, Christoph and Loss, Daniel. (2021) Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power. Physical Review B, 104 (11). p. 115425.

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Official URL: https://edoc.unibas.ch/87692/

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Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design modification of planar devices that enhances these interactions by orders of magnitude and enables low power ultrafast qubit operations in the GHz range. Our approach is based on an asymmetric potential that strongly squeezes the quantum dot in one direction. This confinement-induced spin-orbit interaction does not rely on microscopic details of the device such as growth direction or strain and could be turned on and off on demand in state-of-the-art qubits.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:12 Apr 2022 09:03
Deposited On:12 Apr 2022 09:03

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