Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling

Gao, Fei and Wang, Jian-Huan and Watzinger, Hannes and Hu, Hao and Rančić, Marko J. and Zhang, Jie-Yin and Wang, Ting and Yao, Yuan and Wang, Gui-Lei and Kukučka, Josip and Vukusić, Lada and Kloeffel, Christoph and Loss, Daniel and Liu, Feng and Katsaros, Georgios and Zhang, Jian-Jun. (2020) Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling. Advanced Materials, 32 (16). e1906523.

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Official URL: https://edoc.unibas.ch/87603/

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Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain-relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:04 Apr 2022 10:49
Deposited On:04 Apr 2022 10:49

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