Enhancement of proximity-induced superconductivity in a planar Ge hole gas

Aggarwal, Kushagra and Hofmann, Andrea and Jirovec, Daniel and Prieto, Ivan and Sammak, Amir and Botifoll, Marc and Marti-Sanchez, Sara and Veldhorst, Menno and Arbiol, Jordi and Scappucci, Giordano and Danon, Jeroen and Katsaros, Georgios. (2021) Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research, 3 (2). L022005.

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Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Quantum Computing with Semiconductors (Hofmann)
UniBasel Contributors:Hofmann, Andrea
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:25 Jan 2022 16:33
Deposited On:25 Jan 2022 16:33

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