Phonon spectral density in a GaAs/AlGaAs double quantum dot

Hofmann, Andrea and Karlewski, C. and Heimes, A. and Reichl, C. and Wegscheider, W. and Schön, G. and Ensslin, K. and Ihn, Thomas and Maisi, V. F.. (2020) Phonon spectral density in a GaAs/AlGaAs double quantum dot. Physical Review Research, 2 (3). 033230.

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Official URL: https://edoc.unibas.ch/85257/

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We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations, and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Quantum Computing with Semiconductors (Hofmann)
UniBasel Contributors:Hofmann, Andrea
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:25 Jan 2022 16:11
Deposited On:25 Jan 2022 16:11

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