Studying Tunability of 780 and 655 nm Semiconductor Lasers in Littrow Configuration

Abbasi, Hamed and Nazeri, Majid and Bani, Mohammad Amin and Gharajeh, Abouzar and Khademi, Ahmad. (2015) Studying Tunability of 780 and 655 nm Semiconductor Lasers in Littrow Configuration. In: The 21st Iranian Conference on Optics and Photonics (ICOP2015). pp. 477-480.

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Tunable external cavity diode lasers (ECDLs) have been broadly developed. They have different applications in various fields of science. In this paper tunability of semiconductor lasers (780 nm and 655 nm) are studied. Tuning ranges of 149 and 26 angstrom were demonstrated for 780 and 655 nm lasers, respectively. The Littrow configuration has been used in this experiment. A diffraction grating, a cooling system, a power supply and opto-mechanical components have been used to do so. The spectrum of the output beam of the laser and the power of the output beam of the laser have been measured and reported by means of the spectrometer and the power meter, respectively.
Faculties and Departments:03 Faculty of Medicine > Departement Biomedical Engineering > Laser and Robotics > Biomedical Laser and Optics (Zam)
UniBasel Contributors:Abbasi, Hamed
Item Type:Conference or Workshop Item, refereed
Conference or workshop item Subtype:Conference Paper
Publisher:Optics and Photonics Society of Iran (OPSI)
Note:Publication type according to Uni Basel Research Database: Conference paper
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Last Modified:18 Jan 2021 13:02
Deposited On:08 Jan 2021 09:03

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