Divalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor

Grauszinyte, Migle and Tomerini, Daniele and Goedecker, Stefan and Flores-Livas, Jose A.. (2019) Divalent Path to Enhance p-Type Conductivity in a SnO Transparent Semiconductor. Journal of Physical Chemistry C, 123 (24). pp. 14909-14913.

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The role of the divalent nature of tin is explored in tin monoxide, revealing a novel path for enhancing p-type conductivity. The consequences of oxygen off-stoichiometry indicate that a defect complex formed by a tin vacancy (V-Sn) and an impurity interstitial (D-i) leads to an increased number of free carriers as well as improved acceptor state stability when compared with the isolated V-Sn. In this study, we identify several elements that are able to stabilize such a defect complex configuration. The enhanced ionization of the resulting complex arises from the divalent nature of Sn, which allows Sn(II) and Sn(IV) oxidation states to form. Such a novel doping mechanism not only offers a path for creating a high-performance p-type transparent SnO, but reveals an as-of-yet unexplored route to improve conductivity in other compounds formed by multivalent elements, for example, Sn(II)-based thermoelectrics.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Physik (Goedecker)
UniBasel Contributors:Goedecker, Stefan
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Chemical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:08 Dec 2020 04:10
Deposited On:15 Apr 2020 15:22

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