g-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field

Stano, Peter and Hsu, Chen-Hsuan and Serina, Marcel and Camenzind, Leon C. and Zumbuehl, Dominik M. and Loss, Daniel. (2018) g-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field. Physical Review B, 98 (19).

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Official URL: https://edoc.unibas.ch/69175/

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We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a gated quantum dot based in a two-dimensional electron gas. Starting with a k . p Hamiltonian, we perturbatively calculate these effects for the conduction band of GaAs, up to the third power of the magnetic field. We quantify several corrections to the g-tensor and reveal their relative importance. We find that for typical parameters, the Rashba spin-orbit term and the isotropic term, H-43 alpha (PB)-B-2 . sigma, give the largest contributions in magnitude. The in-plane anisotropy of the g-factor is, on the other hand, dominated by the Dresselhaus spin-orbit term. At zero magnetic field, the total correction to the g-factor is typically 5%-10% of its bulk value. In strong in-plane magnetic fields, the corrections are modified appreciably.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Quantenphysik (Zumbühl)
UniBasel Contributors:Zumbühl, Dominik M and Loss, Daniel and Serina, Marcel and Camenzind, Leon
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:04 Apr 2019 16:50
Deposited On:04 Apr 2019 16:50

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