Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing

Tripathy, S. and Chua, S. J. and Ramam, A. and Sia, E. K. and Pan, J. S. and Lim, R. and Yu, G. and Shen, Z. X.. (2002) Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing. Journal of Applied Physics, 91 (5). pp. 3398-3407.

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Official URL: http://edoc.unibas.ch/46878/

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We report a systematic study of the effects of wet chemical treatment, inductively coupled plasma etching, and thermal annealing on the surface and optical properties of Mg-doped p-type GaN. The chemical bonding and surface stoichiometry of the GaN surface subjected to different processing steps are analyzed based on the results of x-ray photoelectron spectroscopy. Atomic force microscopy has been employed to characterize the surface morphology. Photoluminescence (PL) and micro-Raman techniques have been used to investigate the electronic and vibrational properties of plasma etched surface. We have correlated the surface changes induced by dry etching of p-type GaN to the corresponding changes in the defect and impurity related states, through their manifestation in the PL spectra. We have observed several local vibrational modes (LVMs) in p-type GaN subjected to various processing steps. A broad structure in the low-temperature Raman spectra around 865 cm(-1) is attributed to the electronic Raman scattering from neutral Mg acceptors. In addition to the LVMs of Mg-H-n complexes, two new modes near 2405 and 2584 cm(-1) are observed from the etched p-GaN surface. We have also carried out PL and micro-Raman analyses of Mg-doped GaN films annealed under different conditions.
Faculties and Departments:05 Faculty of Science > Departement Biozentrum > Structural Biology & Biophysics > Nanobiology Argovia (Lim)
UniBasel Contributors:Lim, Roderick Y.H.
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:AIP Publishing
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:03 Nov 2017 10:42
Deposited On:03 Nov 2017 10:42

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