Knopfmacher, O. and Keller, D. and Calame, M. and Schönenberger, C.. (2009) Dual gated silicon nanowire field effect transistors. In: Procedia chemistry, Vol. 1, H. 1. Amsterdam, pp. 678-681.
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Official URL: http://edoc.unibas.ch/dok/A5261885
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Abstract
Silicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing units. We report here on a top down fabrication process in SOI wafers yielding SiNWFETs. We operate the SiNWFETs in a liquid cell and control their operation with two gates: a liquid gate and a back gate. We compare the combined effects of the two gates (dual gating) on the transport characteristics in electrolytes and show that both gates are essential to perform well-defined sensing experiments.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger) |
|---|---|
| UniBasel Contributors: | Schönenberger, Christian and Calame, Michel and Knopfmacher, Oren |
| Item Type: | Conference or Workshop Item, refereed |
| Conference or workshop item Subtype: | Conference Paper |
| Publisher: | Elsevier |
| Note: | Publication type according to Uni Basel Research Database: Conference paper |
| Last Modified: | 14 Sep 2012 07:07 |
| Deposited On: | 22 Mar 2012 14:00 |
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