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Development of power semiconductors by quantitative nanoscale dopant imaging

Bartolf, H. and Gysin, U. and Rossmann, H. R. and Bubendorf, A. and Glatzel, T. and Jung, T. A. and Meyer, E. and Zimmermann, M. and Reshanov, S. and Schöner, A.. (2015) Development of power semiconductors by quantitative nanoscale dopant imaging. In: 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC`s (ISPSD). pp. 281-284.

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Official URL: http://edoc.unibas.ch/41464/

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Abstract

Dopant imaging at high spatial resolution provides an indispensable tool for the improvement of novel power semiconductor devices. Cross-sections of next-generation devices based on Silicon (Si) and Silicon Carbide (SiC) have been investigated by scanning probe microscopy (SPM) derived dopant imaging techniques in a dedicated ultra-high vacuum (UHV) setup to determine the active carrier concentration in differently doped areas of the device under investigation. The physical location of the metallurgical p/n-junction and the associated space-charge regions (SCR) can be experimentally characterized with nanoscale precision. Furthermore, fabrication processes benefit from a reduced number of manufacturing cycles due to the profound knowledge on the evolution of dopant atoms and their corresponding impact on the device performance. Typical power device doping-levels in the range of 1014 cm-3 to 1014 cm-3 can be sensed by the here discussed approach.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Glatzel, Thilo and Gysin, Urs and Bubendorf, Alexander and Jung, Thomas A.
Item Type:Conference or Workshop Item, refereed
Publisher:IEEE
ISBN:978-1-4799-6259-4
e-ISBN:978-1-4799-6261-7
ISSN:1063-6854
e-ISSN:1946-0201
Note:Publication type according to Uni Basel Research Database: Conference paper
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Last Modified:13 Mar 2017 12:35
Deposited On:13 Mar 2017 12:34

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