Epler, J. E. and Schweizer, H. P. and Jung, T. A.. (1993) In situ characterization of MOCVD growth. In: 1993 (5th) International Conference on Indium Phosphide and Related Materials. pp. 259-262.
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Official URL: https://edoc.unibas.ch/95081/
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Abstract
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik |
|---|---|
| UniBasel Contributors: | Jung, Thomas A. |
| Item Type: | Conference or Workshop Item |
| Conference or workshop item Subtype: | Conference Paper |
| Publisher: | IEEE |
| ISBN: | 0-7803-0993-6 |
| Note: | Publication type according to Uni Basel Research Database: Conference paper |
| Identification Number: | |
| Last Modified: | 06 Jul 2023 13:40 |
| Deposited On: | 06 Jul 2023 13:40 |
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