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Electrical transport through a single-electron transistor strongly coupled to an oscillator

Doiron, C. B. and Belzig, W. and Bruder, C.. (2006) Electrical transport through a single-electron transistor strongly coupled to an oscillator. Physical Review B, Vol. 74, H. 20 , 205336, 10 S..

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Official URL: http://edoc.unibas.ch/dok/A5252828

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Abstract

We investigate electrical transport through a single-electron transistor coupled to a nanomechanical oscillator. Using a combination of a master-equation approach and a numerical Monte Carlo method, we calculate the average current and the current noise in the strong-coupling regime, studying deviations from previously derived analytic results valid in the limit of weak coupling. After generalizing the weak-coupling theory to enable the calculation of higher cumulants of the current, we use our numerical approach to study how the third cumulant is affected in the strong-coupling regime. In this case, we find an interesting crossover between a weak-coupling transport regime where the third cumulant heavily depends on the frequency of the oscillator to one where it becomes practically independent of this parameter. Finally, we study the spectrum of the transport noise and show that the two peaks found in the weak-coupling limit merge on increasing the coupling strength. Our calculation of the frequency dependence of the noise also allows one to describe how transport-induced damping of the mechanical oscillations is affected in the strong-coupling regime.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik (Bruder)
UniBasel Contributors:Bruder, Christoph
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0163-1829
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:22 Mar 2012 14:25
Deposited On:22 Mar 2012 13:48

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