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Spin injection across magnetic/nonmagnetic interfaces with finite magnetic layers

Khaetskii, A. and Egues, J. C. and Loss, D. and Gould, C. and Schmidt, G. and Molenkamp, L. W.. (2005) Spin injection across magnetic/nonmagnetic interfaces with finite magnetic layers. Physical Review B, Vol. 71, H. 23 , 235327,6 S..

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Official URL: http://edoc.unibas.ch/dok/A5254661

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Abstract

We have reconsidered the problem of spin injection across ferromagnet/nonmagnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/nonmagnetic-semiconductor (DMS/NMS) interfaces, for structures with finite width d of the magnetic layer (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the d dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong d dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0163-1829
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:22 Mar 2012 14:25
Deposited On:22 Mar 2012 13:48

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