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Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions

Kaladzhyan, V. and Aseev, P. P. and Artemenko, S. N.. (2015) Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions. Physical Review B, 92. p. 155424.

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Official URL: https://edoc.unibas.ch/85170/

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Abstract

We study theoretically the 2D HgTe/CdTe quantum well topological insulator illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force in the conductor, which is proportional to the photocurrent.
Faculties and Departments:05 Faculty of Science > Departement Physik
UniBasel Contributors:Kaladzhyan, Vardan
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:1098-0121
e-ISSN:1550-235X
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:18 Nov 2021 15:18
Deposited On:18 Nov 2021 15:13

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