Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers

Arend, Carsten and Appel, Patrick and Becker, Jonas Nils and Schmidt, Marcel and Fischer, Martin and Gsell, Stefan and Schreck, Matthias and Becher, Christoph and Maletinsky, Patrick and Neu, Elke. (2016) Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers. Applied Physics Letters, 108 (6). 063111.

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Official URL: http://edoc.unibas.ch/53239/

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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500 nm and a height of approximate to 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Georg H. Endress-Stiftungsprofessur für Experimentalphysik (Maletinsky)
UniBasel Contributors:Maletinsky, Patrick M.
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:AIP Publishing
Note:Publication type according to Uni Basel Research Database: Journal article
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edoc DOI:
Last Modified:01 Mar 2017 13:27
Deposited On:01 Mar 2017 13:26

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