Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift-off layers

Curran, Arran and Brown, Spyros and Warburton, Richard J. and Prior, Kevin A.. (2010) Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift-off layers. physica status solidi (b), 247 (6). pp. 1399-1401.

Full text not available from this repository.

Official URL: http://edoc.unibas.ch/45684/

Downloads: Statistics Overview


During epitaxial lift-off of II-VI semiconductors a sacrificial layer of MgS is dissolved by acid. Here we show that the etching speed of this process-varies inversely as the square root of the layer thickness, following a model developed previously for III-V lift-off where the rate limiting step in both cases is transport of insoluble product gases from the etching layer. We also propose a model to explain why sacrificial layer etching fails when strong cohesive forces resist the lifting of the epilayer. This occurs when the sacrificial layer is too thin or when it contains more than a critical amount of an insoluble component, cohension arising from dispersion forces or chains of insoluble atoms, respectively.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
UniBasel Contributors:Warburton, Richard J
Item Type:Article, refereed
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:12 Dec 2016 11:41
Deposited On:12 Dec 2016 11:40

Repository Staff Only: item control page