Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined In As Nanowire Quantum Dots

d`Hollosy, S. and Jung, M. and Baumgartner, A. and Guzenko, V. A. and Madsen, M. H. and Nygard, J. and Schönenberger, C.. (2015) Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined In As Nanowire Quantum Dots. Nano Letters, 15 (7). pp. 4585-4590.

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Official URL: http://edoc.unibas.ch/41340/

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Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, that is, the controlled transport of individual electrons through an In As NW quantum dot (QD) device at frequencies up to 1.3 GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pumping in In As NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, for example, Majorana modes, by single electron spectroscopy and correlation experiments.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:D'Hollosy, Samuel and Jung, Minkyung and Baumgartner, Andreas and Schönenberger, Christian
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Chemical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:13 Oct 2017 07:36
Deposited On:17 May 2016 06:32

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