edoc

Point contacts in encapsulated graphene

Handschin, Clevin and Fülöp, Balint and Makk, Peter and Blanter, Sofya and Weiss, Markus and Watanabe, Kenji and Taniguchi, Takashi and Csonka, Szabolcs and Schönenberger, Christian. (2015) Point contacts in encapsulated graphene. Physical review applied, 107 (18). p. 183108.

Full text not available from this repository.

Official URL: http://edoc.unibas.ch/41335/

Downloads: Statistics Overview

Abstract

We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurementsbetween different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Handschin, Clevin and Makk, Peter and Weiss, Markus and Schönenberger, Christian
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:2331-7019
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:30 Jun 2016 11:02
Deposited On:12 May 2016 10:13

Repository Staff Only: item control page