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Suppression of conductance in a topological insulator nanostep junction

Alos-Palop, M. and Tiwari, Rakesh P. and Blaauboer, M.. (2013) Suppression of conductance in a topological insulator nanostep junction. Physical review. B, Condensed matter and materials physics, Vol. 87, H. 3 , 035432.

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Official URL: http://edoc.unibas.ch/dok/A6223230

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Abstract

We investigate quantum transport via surface states in a nanostep junction on the surface of a three-dimensional topological insulator that involves two different side surfaces. We calculate the conductance across the junction within the scattering matrix formalism and find that as the bias voltage is increased, the conductance of the nanostep junction is suppressed by a factor of 1/3 (independent of the system parameters) as compared to the conductance of a similar planar junction based on a single surface of a topological insulator. We also calculate and analyze the Fano factor of the nanostep junction and predict that the Fano factor saturates at 1/5, five times smaller than for a Poisson process. DOI: 10.1103/PhysRevB.87.035432
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik (Bruder)
UniBasel Contributors:Tiwari, Rakesh
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0163-1829
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:27 Mar 2014 13:12
Deposited On:27 Mar 2014 13:12

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