Alos-Palop, M. and Tiwari, Rakesh P. and Blaauboer, M.. (2013) Suppression of conductance in a topological insulator nanostep junction. Physical review. B, Condensed matter and materials physics, Vol. 87, H. 3 , 035432.
Full text not available from this repository.
Official URL: http://edoc.unibas.ch/dok/A6223230
Downloads: Statistics Overview
Abstract
We investigate quantum transport via surface states in a nanostep junction on the surface of a three-dimensional topological insulator that involves two different side surfaces. We calculate the conductance across the junction within the scattering matrix formalism and find that as the bias voltage is increased, the conductance of the nanostep junction is suppressed by a factor of 1/3 (independent of the system parameters) as compared to the conductance of a similar planar junction based on a single surface of a topological insulator. We also calculate and analyze the Fano factor of the nanostep junction and predict that the Fano factor saturates at 1/5, five times smaller than for a Poisson process. DOI: 10.1103/PhysRevB.87.035432
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Theoretische Physik (Bruder) |
|---|---|
| UniBasel Contributors: | Tiwari, Rakesh |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | American Institute of Physics |
| ISSN: | 0163-1829 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
| Related URLs: | |
| Identification Number: | |
| Last Modified: | 27 Mar 2014 13:12 |
| Deposited On: | 27 Mar 2014 13:12 |
Repository Staff Only: item control page