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Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

Freitag, F. and Trbovic, J. and Schonenberger, C.. (2011) Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes. Physica status solidi. B, Basic solid state physics, Vol. 248, H. 11. pp. 2649-2652.

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Official URL: http://edoc.unibas.ch/dok/A6070297

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Abstract

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4-2. This (near) doubling of the CF indicates that the phase coherence length is l(phi)greater than or similar to L/2. As compared to previous work, we find a relatively weak dependence of the CF on the gate voltage, and hence on the carrier density. We also demonstrate that whether the CF are larger or smaller at the charge neutrality point (CNP) can be strongly dependent on the series resistance R(C), which needs to be subtracted. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Freitag, Frank and Trbovic, Jelena
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:Wiley VCH-Verlag
ISSN:0370-1972
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:01 Feb 2013 08:46
Deposited On:01 Feb 2013 08:44

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