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Friction forces on hydrogen passivated (110) silicon and silicon dioxide studied by scanning force microscopy

Scandella, L. and Meyer, E. and Howald, L. and Luthi, R. and Guggisberg, M. and Gobrecht, J. and Guntherodt, H. J.. (1996) Friction forces on hydrogen passivated (110) silicon and silicon dioxide studied by scanning force microscopy. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement, and phenomena, Vol. 14, H. 2. pp. 1255-1258.

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Official URL: http://edoc.unibas.ch/dok/A5839475

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Abstract

Scanning force microscopy (SFM) was used to study the surface topography and the low load, small contact area frictional behavior of hydrogen passivated (H-terminated) silicon and silicon dioxide in a dry nitrogen atmosphere. The unpassivated samples showed no significant contrast in frictional sliding of a SFM tip between the thermally grown silicon dioxide and the native silicon dioxide that typically covers exposed silicon surfaces. The H-termination of the sample surface leads to an increase in friction by a factor of 2 on silicon, whereas the friction of the silicon dioxide is not influenced. Coefficients of friction were determined by using the two-dimensional histogram technique. On SiO2 and H-terminated Si surfaces, using standard Si3N4 tips, coefficients of friction were determined to be 0.3+/-0.1 and 0.6+/-0.1, respectively. (C) 1996 American Vacuum Society.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Meyer, Ernst
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Vacuum Society
ISSN:1071-1023
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:14 Sep 2012 07:18
Deposited On:14 Sep 2012 06:43

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