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Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH

Knopfmacher, O. and Tarasov, A. and Wipf, M. and Fu, W. Y. and Calame, M. and Schonenberger, C.. (2012) Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH. Chemphyschem, Vol. 13, H. 5. S. 1157-1160.

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Official URL: http://edoc.unibas.ch/dok/A6070304

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Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Knopfmacher, Oren and Tarasov, Alexey and Wipf, Mathias and Fu, Wangyang and Calame, Michel
Item Type:Article, refereed
Bibsysno:Link to catalogue
Publisher:Wiley-VCH
ISSN:1439-4235
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:01 Mar 2013 11:14
Deposited On:01 Mar 2013 11:12

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