Items where Author is "Rossmann, H. R."

2016

Gysin, U. and Meyer, E. and Glatzel, Th and Guenzburger, G. and Rossmann, H. R. and Jung, T. A. and Reshanov, S. and Schoener, A. and Bartolf, H.. (2016) Dopant imaging of power semiconductor device cross sections. Microelectronic Engineering, 160. pp. 18-21.

Rossmann, H. R. and Gysin, U. and Bubendorf, A. and Glatzel, T. and Reshanov, S. A. and Zhang, A. and Schoner, A. and Jung, T. A. and Meyer, E. and Bartolf, H.. (2016) Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging. Materials Science Forum, 858. pp. 497-500.

2015

Bartolf, H. and Gysin, U. and Rossmann, H. R. and Bubendorf, A. and Glatzel, T. and Jung, T. A. and Meyer, E. and Zimmermann, M. and Reshanov, S. and Schöner, A.. (2015) Development of power semiconductors by quantitative nanoscale dopant imaging. In: 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC`s (ISPSD). pp. 281-284.

Rossmann, H. R. and Bubendorf, A. and Zanella, F. and Marjanovic, N. and Schnieper, M. and Meyer, E. and Jung, T. A. and Gobrecht, J. and Minamisawa, R. A. and Bartolf, H.. (2015) Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes. Microelectronic Engineering, 145. pp. 166-169.

Bartolf, H. and Gysin, U. and Glatzel, T. and Rossmann, H. R. and Jung, T. A. and Reshanov, S. A. and Schöner, A. and Meyer, E.. (2015) Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging. Microelectronic Engineering, 148. pp. 1-4.

Rossmann, H. R. and Gysin, Urs and Bubendorf, Alexander and Glatzel, Thilo and Reshanov, Sergey and Schöner, Adolf and Jung, T. A. and Meyer, Ernst and Bartolf, Holger. (2015) Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers. Materials Science Forum, 821-823. pp. 269-272.