Items where Author is "Knopfmacher, O."

2012

Knopfmacher, O. and Tarasov, A. and Wipf, M. and Fu, W. Y. and Calame, M. and Schonenberger, C.. (2012) Silicon-Based Ion-Sensitive Field-Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH. Chemphyschem, Vol. 13, H. 5. pp. 1157-1160.

Tarasov, A. and Wipf, M. and Bedner, K. and Kurz, J. and Fu, W. and Guzenko, V. A. and Knopfmacher, O. and Stoop, R. L. and Calame, M. and Schonenberger, C.. (2012) True Reference Nanosensor Realized with Silicon Nanowires. Langmuir, Vol. 28, H. 25. pp. 9899-9905.

Tarasov, A. and Wipf, M. and Stoop, R. L. and Bedner, K. and Fu, W. Y. and Guzenko, V. A. and Knopfmacher, O. and Calame, M. and Schonenberger, C.. (2012) Understanding the Electrolyte Background for Biochemical Sensing with Ion-Sensitive Field-Effect Transistors. ACS nano, Vol. 6, H. 10. pp. 9291-9298.

2011

Tarasov, A. and Fu, W. and Knopfmacher, O. and Brunner, J. and Calame, M. and Schonenberger, C.. (2011) Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors. Applied physics letters, Vol. 98 , 012114.

2010

Knopfmacher, O. and Tarasov, A. and Fu, W. and Calame, M. and Schönenberger, C.. (2010) Sensitivity considerations in dual-gated Si-nanowire FET sensors. European cells and materials, Vol. 20. p. 140.

Knopfmacher, O. and Tarasov, A. and Wangyang, Fu and Wipf, M. and Niesen, B. and Calame, M. and Schönenberger, C.. (2010) The Nernst limit in dual-gated Si nanowire FET sensors. Nano Letters, Vol. 10, H. 6. pp. 2268-2274.

2009

Knopfmacher, O. and Keller, D. and Calame, M. and Schönenberger, C.. (2009) Dual gated silicon nanowire field effect transistors. In: Procedia chemistry, Vol. 1, H. 1. Amsterdam, pp. 678-681.