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Items where Author is "Bartolf, H."

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Jump to: 2019 | 2016 | 2015
Number of items: 6.

2019

Dutta, D. and De, D. S. and Fan, D. and Roy, S. and Alfieri, G. and Camarda, M. and Amsler, M. and Lehmann, J. and Bartolf, H. and Goedecker, S. and Jung, T. A.. (2019) Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET. Applied Physics Letters, 115 (10). p. 101601.

2016

Gysin, U. and Meyer, E. and Glatzel, Th and Guenzburger, G. and Rossmann, H. R. and Jung, T. A. and Reshanov, S. and Schoener, A. and Bartolf, H.. (2016) Dopant imaging of power semiconductor device cross sections. Microelectronic Engineering, 160. pp. 18-21.

Rossmann, H. R. and Gysin, U. and Bubendorf, A. and Glatzel, T. and Reshanov, S. A. and Zhang, A. and Schoner, A. and Jung, T. A. and Meyer, E. and Bartolf, H.. (2016) Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging. Materials Science Forum, 858. pp. 497-500.

2015

Bartolf, H. and Gysin, U. and Rossmann, H. R. and Bubendorf, A. and Glatzel, T. and Jung, T. A. and Meyer, E. and Zimmermann, M. and Reshanov, S. and Schöner, A.. (2015) Development of power semiconductors by quantitative nanoscale dopant imaging. In: 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC`s (ISPSD). pp. 281-284.

Rossmann, H. R. and Bubendorf, A. and Zanella, F. and Marjanovic, N. and Schnieper, M. and Meyer, E. and Jung, T. A. and Gobrecht, J. and Minamisawa, R. A. and Bartolf, H.. (2015) Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes. Microelectronic Engineering, 145. pp. 166-169.

Bartolf, H. and Gysin, U. and Glatzel, T. and Rossmann, H. R. and Jung, T. A. and Reshanov, S. A. and Schöner, A. and Meyer, E.. (2015) Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging. Microelectronic Engineering, 148. pp. 1-4.

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