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Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

Epler, J. E. and Jung, T. A. and Schweizer, H. P.. (1993) Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient. Applied Physics Letters, 62 (2). pp. 143-145.

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Abstract

The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 mum scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik
UniBasel Contributors:Jung, Thomas A.
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:AIP Publishing
ISSN:0003-6951
e-ISSN:1077-3118
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
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edoc DOI:
Last Modified:22 May 2023 07:22
Deposited On:22 May 2023 07:22

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