Reduction of the contact resistance by doping in pentacene few monolayers thin film transistors and self-assembled nanocrystals

The authors study the contact resistance of gold-pentacene interface by applying the transmission-line method to a few monolayers thick pentacene films in thin film transistor geometry. It was found that tetrafluorotetracyanoquinodimethane (F(4)TCNQ) doping reduces the contact resistance by more than a factor of 20. In addition, a significant improvement of the conductance of pentacene nanocrystals self-assembled on 10 nm gap Au nanojunction devices by F(4)TCNQ doping is observed. The result demonstrates the importance of doping on the performance of organic electronic devices from 10 nm scale up to 100 mu m scale. (C) 2007 American Institute of Physics.