edoc

Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits

Malkoc, Ognjen and Stano, Peter and Loss, Daniel. (2022) Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits. Physical Review Letters, 129 (24). p. 247701.

[img]
Preview
PDF - Published Version
611Kb

Official URL: https://edoc.unibas.ch/93489/

Downloads: Statistics Overview

Abstract

We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:0031-9007
e-ISSN:1079-7114
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
Identification Number:
edoc DOI:
Last Modified:08 Mar 2023 10:15
Deposited On:08 Mar 2023 10:15

Repository Staff Only: item control page