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Spin-Hall transport of heavy holes in III-V semiconductor quantum wells

Schliemann, J. and Loss, D.. (2005) Spin-Hall transport of heavy holes in III-V semiconductor quantum wells. Physical Review B, Vol. 71, H. 8 , 085308, 6 S..

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Official URL: http://edoc.unibas.ch/dok/A5254669

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Abstract

We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin conductivity vanishes, whereas the off-diagonal elements of the spin-conductivity tensor are finite giving rise to an intrinsic spin-Hall effect. For a clean system we find a closed expression for the spin-Hall conductivity depending on the length scale of the Rashba coupling and the hole density. In this limit the spin-Hall conductivity is enhanced compared to its value for electron systems, and it vanishes with increasing strength of the impurity scattering. As an aside, we also derive explicit expressions for the Fermi momenta and the densities of holes in the different dispersion branches as a function of the spin-orbit coupling parameter and the total hole density. These results are of relevance for the interpretation of possible Shubnikov-de Haas measurements detecting the Rashba spin splitting.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0163-1829
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:22 Mar 2012 14:25
Deposited On:22 Mar 2012 13:48

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