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Charge transport through a single-electron transistor with a mechanically oscillating island

Chtchelkatchev, N. M. and Belzig, W. and Bruder, C.. (2004) Charge transport through a single-electron transistor with a mechanically oscillating island. Physical Review B, Vol. 70, H. 19 , 193305, 4 S..

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Official URL: http://edoc.unibas.ch/dok/A5252838

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Abstract

We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways. The changes in the Coulomb blockade oscillations and in the current noise spectral density help to determine in what way the island oscillates, and allow to estimate the amplitude and the frequency of the oscillations.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik (Bruder)
UniBasel Contributors:Bruder, Christoph
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0163-1829
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:22 Mar 2012 14:25
Deposited On:22 Mar 2012 13:48

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