High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Camenzind, Timothy N. and Elsayed, Asser and Mohiyaddin, Fahd A. and Li, Ruoyu and Kubicek, Stefan and Jussot, Julien and Van Dorpe, Pol and Govoreanu, Bogdan and Radu, Iuliana and Zumbühl, Dominik M.. (2021) High mobility SiMOSFETs fabricated in a full 300mm CMOS process. Materials for Quantum Technology, 1 (4 ). 041001.

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Official URL: https://edoc.unibas.ch/87556/

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The quality of the semiconductor–barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full complementary metal oxide semiconductor (CMOS) process and of very thin oxide below a thickness of 10 nm, we report a record mobility of 17.5 × 103 cm2 V−1 s−1 indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Quantenphysik (Zumbühl)
UniBasel Contributors:Zumbühl, Dominik M
Item Type:Article, refereed
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:11 Apr 2022 14:40
Deposited On:11 Apr 2022 14:40

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