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Global strain-induced scalar potential in graphene devices

Wang, L. and Baumgartner, A. and Makk, P. and Zihlmann, S. and Varghese, B. S. and Indolese, D. I. and Watanabe, K. and Taniguchi, T. and Schönenberger, C.. (2021) Global strain-induced scalar potential in graphene devices. Communications physics, 4 (1). p. 147.

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Official URL: https://edoc.unibas.ch/86342/

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Abstract

By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Baumgartner, Andreas and Wang, Lujun and Makk, Peter and Zihlmann, Simon and Varghese, Blesson Sam and Indolese, David
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:Nature Publishing Group
ISSN:2399-3650
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
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Last Modified:07 Apr 2022 13:33
Deposited On:07 Apr 2022 13:33

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