Suppression of Surface-Related Loss in a Gated Semiconductor Microcavity

Najer, Daniel and Tomm, Natasha and Javadi, Alisa and Korsch, Alexander R. and Petrak, Benjamin and Riedel, Daniel and Dolique, Vincent and Valentin, Sascha R. and Schott, Rudiger and Wieck, Andreas D. and Ludwig, Arne and Warburton, Richard J.. (2021) Suppression of Surface-Related Loss in a Gated Semiconductor Microcavity. Physical review applied, 15 (4). 044004.

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We present a surface-passivation method that reduces surface-related losses by almost 2 orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector with radius of approximately 10 ?m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor distributed Bragg reflector followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly -n-doped and highly -p-doped layers is minimized by our positioning them close to a node of the vacuum electromagnetic field. The surface, however, resides at an antinode of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-band-gap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nanophotonic devices that rely on a GaAs-vacuum interface to confine the electromagnetic field.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
UniBasel Contributors:Warburton, Richard J
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:07 Apr 2022 09:44
Deposited On:07 Apr 2022 09:44

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