Tuning the Mode Splitting of a Semiconductor Microcavity with Uniaxial Stress

Tomm, Natasha and Korsch, Alexander R. and Javadi, Alisa and Najer, Daniel and Schott, Rudiger and Valentin, Sascha R. and Wieck, Andreas D. and Ludwig, Arne and Warburton, Richard J.. (2021) Tuning the Mode Splitting of a Semiconductor Microcavity with Uniaxial Stress. Physical Review Applied, 15 (5). 054061.

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A splitting of the fundamental optical modes in micro- and nanocavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays a role in light-matter interaction and hence quantum technology applications, a method for controlling the mode splitting is useful. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating a n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode splitting as a function of wavelength across the stopband. We demonstrate a reversible in situ technique to tune the mode splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of approximately 11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode splitting and its tuning across the stopband leads to a quantitative understanding of the mechanism behind the results.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
UniBasel Contributors:Warburton, Richard J
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:07 Apr 2022 09:42
Deposited On:07 Apr 2022 09:42

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