Maisi, V. F. and Hofmann, A. and Röösli, M. and Basset, J. and Reichl, C. and Wegscheider, W. and Ihn, T. and Ensslin, K.. (2016) Spin-Orbit Coupling at the Level of a Single Electron. Physical Review Letters, 116 (13). p. 136803.
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Official URL: https://edoc.unibas.ch/85271/
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Abstract
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Experimental Quantum Computing with Semiconductors (Hofmann) |
|---|---|
| UniBasel Contributors: | Hofmann, Andrea |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | American Physical Society |
| ISSN: | 0031-9007 |
| e-ISSN: | 1079-7114 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
| Related URLs: | |
| Identification Number: |
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| Last Modified: | 06 Apr 2022 09:47 |
| Deposited On: | 06 Apr 2022 09:47 |
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