Measuring the Degeneracy of Discrete Energy Levels Using a GaAs / AlGaAs Quantum Dot

Hofmann, A. and Maisi, V. F. and Gold, C. and Krähenmann, T. and Rössler, C. and Basset, J. and Märki, P. and Reichl, C. and Wegscheider, W. and Ensslin, K. and Ihn, T.. (2016) Measuring the Degeneracy of Discrete Energy Levels Using a GaAs / AlGaAs Quantum Dot. Physical Review Letters, 117 (20). p. 206803.

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We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance and the ability to perform precise and efficient measurements of energy-dependent tunneling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunneling with a precision enhanced by a feedback control. It is thoroughly tested by tuning orbital and spin degeneracies with electric and magnetic fields. The technique also lends itself to studying the connection between the ground-state degeneracy and the lifetime of the excited states.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Quantum Computing with Semiconductors (Hofmann)
UniBasel Contributors:Hofmann, Andrea
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:28 Jan 2022 10:54
Deposited On:28 Jan 2022 10:54

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