Grayscale e-beam lithography: Effects of a delayed development for well-controlled 3D patterning

Mortelmans, Thomas and Kazazis, Dimitrios and Guzenko, Vitaliy A. and Padeste, Celestino and Braun, Thomas and Stahlberg, Henning and Li, Xiaodan and Ekinci, Yasin. (2020) Grayscale e-beam lithography: Effects of a delayed development for well-controlled 3D patterning. Microelectronic Engineering, 225. p. 111272.

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Official URL: https://edoc.unibas.ch/83898/

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Grayscale electron beam lithography (g-EBL) is a fabrication technique that allows for tunable control of resist topography. In most cases, the height of the structures is in the submicron regime. Here, we present an extensive experimental characterization of the post electron beam exposure behavior of poly(methyl methacrylate) (PMMA) 950 K for grayscale structuring with several micrometers in height. The obtained results show that the development depth for the same electron dose is dependent on the time between exposure and development. This dependence becomes more prominent at higher exposure doses. Additionally, it was found that a post-exposure bake influences the dose-response behavior of the resist material and, therefore, also the obtained three-dimensional (3D) structure. This work paves the way for well-controlled 3D micrometer structuring via g-EBL.
Faculties and Departments:05 Faculty of Science > Departement Biozentrum > Former Organization Units Biozentrum > Structural Biology (Stahlberg)
05 Faculty of Science > Departement Biozentrum > Structural Biology & Biophysics > Structural Biology (Braun)
UniBasel Contributors:Braun, Thomas
Item Type:Article, refereed
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:24 Nov 2021 16:24
Deposited On:06 Oct 2021 10:30

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