Low-noise GaAs quantum dots for quantum photonics

Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons-bandwidth-matched to an atomic quantum-memory-and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an n-i-p-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum. GaAs quantum dots emitting at the near-red part of the spectrum usually suffers from excess charge-noise. With a careful design of a n-i-p-diode structure hosting GaAs quantum dots, the authors demonstrate ultralow-noise behaviour and high-fidelity spin initialisation close to rubidium wavelengths.