Gadea Díez, Gerard and Sojo Gordillo, Jose Manuel and Pacios Pujadó, Mercè and Sallaeras, Marc and Fonseca, Luis and Morata, Alex and Tarancón Rubio, Albert. (2020) Enhanced thermoelectric figure of merit of individual Si nanowires with ultralow contact resistances. Nano Energy, 67. p. 104191.
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Official URL: https://edoc.unibas.ch/80521/
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Abstract
Low-dimensional silicon-based materials have shown a great potential for thermoelectric applications due to their enhanced figure of merit ZT and high technology compatibility. However, their implementation in real devices remains highly challenging due to the associated large contact resistances (thermal and electrical). Herein we demonstrate ultralow contact resistance silicon nanowires epitaxially grown on scalable devices with enhanced ZT . Temperature dependent figure of merit was fully determined for monolithically integrated individual silicon nanowires achieving a maximum value of ZT= 0.2 at 620 K. Sidewise, this work accounts for the first time nearly zero thermal and electrical contact resistances in monolithically integrated bottom-up nanowires.
Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Experimental Material Physics (Zardo) |
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UniBasel Contributors: | Gadea Diez, Gerard |
Item Type: | Article, refereed |
Article Subtype: | Research Article |
Publisher: | Elsevier |
ISSN: | 2211-2855 |
Note: | Publication type according to Uni Basel Research Database: Journal article |
Identification Number: | |
Last Modified: | 20 Apr 2021 10:02 |
Deposited On: | 20 Apr 2021 10:02 |
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