Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires

Bayogan, Janice Ruth and Park, Kidong and Siu, Zhuo Bin and An, Sung Jin and Tang, Chiu-Chun and Zhang, Xiao-Xiao and Song, Man Suk and Park, Jeunghee and Jalil, Mansoor B. A. and Nagaosa, Naoto and Hirakawa, Kazuhiko and Schonenberger, Christian and Seo, Jungpil and Jung, Minkyung. (2020) Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires. Nanotechnology, 31 (20). p. 205001.

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Official URL: https://edoc.unibas.ch/80430/

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We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Jung, Minkyung
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:IOP Publishing
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:14 Apr 2021 12:55
Deposited On:14 Apr 2021 12:55

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